M58LT128HSB8ZA6 NUMONYX [Numonyx B.V], M58LT128HSB8ZA6 Datasheet - Page 83

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M58LT128HSB8ZA6

Manufacturer Part Number
M58LT128HSB8ZA6
Description
Manufacturer
NUMONYX [Numonyx B.V]
Datasheet

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M58LT128HST, M58LT128HSB
Table 33.
Offset
01Bh
01Ch
01Dh
01Eh
01Fh
020h
021h
022h
023h
024h
025h
026h
000Ah
0017h
0020h
0085h
0095h
0004h
0009h
0000h
0004h
0004h
0002h
0000h
Data
CFI query system interface information
V
V
V
V
Typical timeout per single byte/word program = 2
Typical timeout for Buffer Program = 2
Typical timeout per individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for word program = 2
Maximum timeout for Buffer Program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
DD
DD
PP
PP
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
[programming] supply minimum Program/Erase voltage
[programming] supply maximum Program/Erase voltage
logic supply minimum Program/Erase or Write voltage
logic supply maximum Program/Erase or Write voltage
Description
n
n
times typical
n
ms
n
µs
n
times typical
times typical
n
ms
n
n
times typical
µs
Common Flash Interface
8192 µs
256 µs
512µs
Value
16µs
1.7V
8.5V
9.5V
NA
NA
2V
1s
4s
83/110

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