M36DR432A100ZA6C STMICROELECTRONICS [STMicroelectronics], M36DR432A100ZA6C Datasheet - Page 18

• Manufacturer Part Number: M36DR432A100ZA6C
• Description: 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M36DR432A, M36DR432B
POWER CONSUMPTION
Power Down
The memory provides Reset/Power Down control
input RPF. The Power Down function can be acti-
vated only if the relevant Configuration Register bit
is set to '1'. In this case, when the RPF signal is
pulled at V
I
the outputs are in high impedance.If RPF is pulled
to V
operation is aborted in t
content is no longer valid (see Reset/Power Down
input description).
18/46
CC2
SS
(see Table 24), the memory is deselected and
during a Program or Erase operation, this
SS
the supply current drops to typically
PLQ7V
and the memory
Power Up
The memory Command Interface is reset on Pow-
er Up to Read Array. Either EF or WF must be tied
to V
and the possibility to write a command on the first
rising edge of WF.
Supply Rails
Normal precautions must be taken for supply volt-
age decoupling; each device in a system should
have the V
itor close to the V
widths should be sufficient to carry the required
V
CCF
IH
program and erase currents.
during Power Up to allow maximum security
CCF
rails decoupled with a 0.1µF capac-
CCF
and V
SS
pins. The PCB trace