M36DR432A100ZA6C STMICROELECTRONICS [STMicroelectronics], M36DR432A100ZA6C Datasheet - Page 28

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M36DR432A100ZA6C

Manufacturer Part Number
M36DR432A100ZA6C
Description
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
M36DR432A, M36DR432B
Table 26. Flash Write AC Characteristics, Write Enable Controlled
(T
Figure 9. Flash Write AC Waveforms, WF Controlled
Note: 1. Address are latched on the falling edge of WF, Data is latched on the rising edge of WF.
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A
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
PLQ7V
VDHEL
= –40 to 85 °C; V
t
DVWH
GHWL
WHDX
WHEH
WHGL
WHWL
WLWH
AVWL
WLAX
ELWL
AVAV
A0-A20
EF
GF
WF
DQ0-DQ15
V DDF
t
t
t
t
WPH
t
t
t
OEH
Alt
t
t
t
VCS
t
WC
WP
DS
CS
DH
CH
AH
AS
DDF
Address Valid to Next Address Valid
Address Valid to Write Enable Low
Input Valid to Write Enable High
Chip Enable Low to Write Enable Low
Output Enable High to Write Enable Low
RPF Low to Reset Complete During Program/Erase
V
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Output Enable Low
Write Enable High to Write Enable Low
Write Enable Low to Address Transition
Write Enable Low to Write Enable High
CCF
tVDHEL
= 1.65V to 2.2V
High to Chip Enable Low
tELWL
tGHWL
tAVWL
Parameter
tAVAV
VALID
tWLWH
tDVWH
VALID
tWLAX
Min
100
50
50
30
30
50
50
0
0
0
0
0
tWHEH
100
tWHGL
tWHWL
Max
tWHDX
15
Flash
Min
120
50
50
30
30
50
50
0
0
0
0
0
120
AI90210
Max
15
Unit
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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