FDC645N_01 FAIRCHILD [Fairchild Semiconductor], FDC645N_01 Datasheet
FDC645N_01
Manufacturer Part Number
FDC645N_01
Description
N-Channel PowerTrench MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDC645N_01.pdf
(5 pages)
FDC645N
N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DC/DC converter
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
N-Channel
.645
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
MOSFET
DS(ON)
D
D
and fast switching speed.
TM
S
– Continuous
– Pulsed
has
FDC645N
Device
Parameter
D
been
D
G
designed
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
5.5 A, 30 V.
High performance trench technology for extremely
Low gate charge (13 nC typical)
High power and current handling capability
low R
DS(ON)
1
2
3
Tape width
R
R
DS(ON)
DS(ON)
-55 to +150
8mm
Ratings
5.5
1.6
0.8
30
20
78
30
12
= 30 m
= 26 m
@ V
@ V
6
5
4
GS
GS
April 2001
3000 units
FDC645N Rev C(W)
= 4.5 V
= 10 V
Quantity
Units
C/W
C/W
W
V
V
A
C
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FDC645N_01 Summary of contents
Page 1
FDC645N N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R and fast switching ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
Page 3
Typical Characteristics 10V GS 4.5V 3.5V 15 3. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 4.5V GS 1.4 1.2 ...
Page 4
Typical Characteristics 5. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10ms 100ms 1s 1 ...
Page 5
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ISOPLANAR™ ...