FDC645 Fairchild Semiconductor, FDC645 Datasheet

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FDC645

Manufacturer Part Number
FDC645
Description
N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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FDC645N
N-Channel PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
• DC/DC converter
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
N-Channel
.645
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
MOSFET
DS(ON)
D
D
and fast switching speed.
TM
S
– Continuous
– Pulsed
has
FDC645N
Device
Parameter
D
been
   
D
MOSFET
G
designed
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
• 5.5 A, 30 V.
• High performance trench technology for extremely
• Low gate charge (13 nC typical)
• High power and current handling capability
low R
DS(ON)
1
2
3
Tape width
R
R
DS(ON)
DS(ON)
-55 to +150
8mm
Ratings
±12
5.5
1.6
0.8
30
20
78
30
= 30 mΩ @ V
= 26 mΩ @ V
PRELIMINARY
6
5
4
GS
GS
July 2000
3000 units
= 4.5 V
= 10 V
FDC645N Rev B(W)
Quantity
Units
°C/W
°C/W
°C
W
V
V
A

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FDC645 Summary of contents

Page 1

... Reel Size 7’’ July 2000 PRELIMINARY mΩ 4.5 V DS(ON mΩ DS(ON Ratings Units 30 V ± 1.6 W 0.8 -55 to +150 °C 78 °C/W 30 °C/W Tape width Quantity 8mm 3000 units FDC645N Rev B(W) ...

Page 2

... S is determined by the user's board design. Min Typ Max Units mV/°C 1 µA 100 nA –100 nA 0.8 1 – 4 mV/° mΩ 1460 pF 227 3.6 nC 3.6 nC 1.3 A 0.7 1.2 V FDC645N Rev B(W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V GS 3.5V 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 3. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC645N Rev B( 1.4 ...

Page 4

... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 156°C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDC645N Rev B(W) ...

Page 5

... Pizza Box fo r Standar d Opti on SSOT-6 Tape Leader and Trailer Configuration: Figur e 2.0 Carrier Tape Cover Tape Traile r Tape 300mm mi nimum or 75 empty poc kets 1998 Fairchild Semiconductor Corporation Anti static Cover Tape Embossed F63TNR Carrier Tape Label 631 631 SSOT-6 Unit Orientation ...

Page 6

SuperSOT TM -6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3 Pkg type SSOT-6 3.23 3.18 8.0 1.55 +/-0.10 +/-0.10 +/-0.3 +/-0.05 (8mm) Notes: ...

Page 7

... SuperSOT TM -6 Tape and Reel Data and Package Dimensions, continued SuperSOT -6 (FS PKG Code 31, 33) 1998 Fairchild Semiconductor Corporation 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 September 1998, Rev. A ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ ...

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