BS170_01 FAIRCHILD [Fairchild Semiconductor], BS170_01 Datasheet

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BS170_01

Manufacturer Part Number
BS170_01
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
Absolute Maximum Ratings
Symbol
V
V
V
I
P
T
T
THERMAL CHARACTERISTICS
R
© 1997 Fairchild Semiconductor Corporation
These
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide
rugged, reliable, and fast switching performance. They can
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
____________
D
General Description
DSS
DGR
GSS
D
J
L
N-Channel Enhancement Mode Field Effect Transistor
BS170 / MMBF170
,T
JA
STG
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal Resistacne, Junction-to-Ambient
N-Channel enhancement mode field effect
___________________________________________________________________
- Pulsed
GS
< 1M )
T
A
= 25°C unless otherwise noted
Features
BS170
1200
500
830
150
High density cell design for low R
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
6.6
-55 to 150
± 20
300
60
60
G
MMBF170
500
800
300
417
2.4
DS(ON)
.
BS170 Rev. C / MMBF170 Rev. D
D
S
April 1995
mW/°C
Units
°C/W
mW
mA
°C
°C
V
V
V

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BS170_01 Summary of contents

Page 1

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate - Body Leakage, Forward GSSF ON CHARACTERISTICS (Note 1) V Gate Threshold Voltage ...

Page 3

Typical Electrical Characteristics 10V GS 9.0 1 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 10V ...

Page 4

Typical Electrical Characteristics 1 100µA D 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature . ...

Page 5

Typical Electrical Characteristics 0.5 0.1 0. 10V GS SINGLE PULSE T = 25°C A 0.01 0.005 DRAIN-SOURCE VOLTAGE (V) DS Figure 13. BS170 Maximum Safe Operating Area 1 ...

Page 6

TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B CBVK741B019 10000 LOT: QTY: PN2222N NSID: SPEC: D/C1: D9842 SPEC REV REV: (FSCINT) F63TNR Label sample LOT: CBVK741B019 QTY: 2000 FSID: ...

Page 7

TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Style “A”, D26Z, D70Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE ...

Page 8

TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4 User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ELECT ROSTATIC SEN SITIVE D EVICES F63TNR Label ...

Page 9

TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.22 ...

Page 10

SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1. 0 Customized La bel SOT-23 Packaging Information Standard Packaging Option D87Z (no flow code ) Packaging type TNR TNR Qty per Reel/Tube/Bag 3,000 10,000 Reel Size 7" Dia 13" Box ...

Page 11

SOT-23 Tape and Reel Data, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3 Pkg type SOT-23 3.15 2.77 8.0 1.55 +/-0.10 +/-0.10 +/-0.3 +/-0.05 (8mm) Notes: A0, B0, and K0 dimensions ...

Page 12

SOT-23 Package Dimensions SOT-23 (FS PKG Code 49) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 September 1998, Rev. A1 ...

Page 13

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ 2 ...

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