HYB18T512400AC Infineon Technologies AG, HYB18T512400AC Datasheet - Page 12

• Manufacturer Part Number: HYB18T512400AC
• Description: DDR2 Registered Memory Modules
• Manufacturer: Infineon Technologies AG

3.0 Absolute Maximum Ratings
3.1 Operating Temperature Range
3.2 Supply Voltage Levels and DC Operating Conditions
Data Sheet
Preliminary
DIMM Module Operating Temperature Range (ambient)
DRAM Component Case Temperature Range
Voltage on any pins relative to V
Voltage on V
Voltage on V
Storage temperature range
Parameter
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Parameter
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
EEPROM Supply Voltage
DC Input Logic High
DC Input Logic Low
In / Output Leakage Current
1
2
3
1. DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs. For
2. Within the DRAM Component Case Temperature range all DRAM specification will be supported.
3. Above 85
4. Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the DRAM is below
Under all conditions, V
Peak to peak AC noise on V
For any pin on the DIMM connector under test input of 0 V
measurement conditions, please refer to the JEDEC document JESD51-2.
85
o
C case temperature before initiating self-refresh operation.
DD
DD Q
o
C DRAM case temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs.
relative to V
relative to V
DDQ
must be less than or equal to V
SS
REF
SS
may not exceed ± 2% V
Symbol
V
V
V
V
V
V
I
SS
L
DD
DDQ
REF
DDSPD
IH (DC)
IL (DC)
HYS72T[256/128/64][0/2][0/2]0[G/H]R-[5/3.7]-A
V
0.49 x V
REF
– 0.30
min.
1.7
1.7
1.7
– 5
+ 0.125
REF (DC)
DD
12
DDQ
V
IN
.V
Registered DDR2 SDRAM Modules
REF
V
DDQ
Limit Values
is also expected to track noise variations in V
Symbol
TOPR
TCASE
0.5 x V
Symbol
V
V
V
T
+ 0.3 V.
nom.
STG
IN,
DD
DDQ
1.8
1.8
–
–
–
–
V
OUT
DDQ
min.
Limit Values
0
0
V
0.51 x V
V
REF
DDQ
– 0.5
– 1.0
– 0.5
min.
-55
max.
1.9
1.9
3.6
– 0.125
Limit Values
5
+ 0.3
max.
DDQ
+55
+95
Rev. 0.85, 2004-04
Unit
max.
+100
2.3
2.3
2.3
Unit
o
o
V
V
V
V
V
V
C
C
A
DDQ
Notes
-
1)
2)
3)
Notes
1 - 4
.
Unit
V
V
o
C