HUFA75831SK8T FAIRCHILD [Fairchild Semiconductor], HUFA75831SK8T Datasheet - Page 8

• Manufacturer Part Number: HUFA75831SK8T
• Description: 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

PSPICE Electrical Model
.SUBCKT HUFA75831SK8 2 1 3 ;
CA 12 8 2.00e-9
CB 15 14 2.00e-9
CIN 6 8 1.10e-9
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 155.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 1.12e-9
LSOURCE 3 7 1.29e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 5.80e-2
RGATE 9 20 1.95
RLDRAIN 2 5 10
RLGATE 1 9 11.2
RLSOURCE 3 7 1.29
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 2.20e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*40),2))}
.MODEL DBODYMOD D (IS = 9.95e-13 RS = 6.61e-3 TRS1 = 1.02e-4 TRS2 = 0 CJO = 1.53e-9 TT = 2.12e-7 M = 0.62)
.MODEL DBREAKMOD D (RS = 9.00e- 1TRS1 = 9.94e- 4TRS2 = 1.06e-7)
.MODEL DPLCAPMOD D (CJO = 1.35e- 9IS = 1e-3 0M = 0.90)
.MODEL MMEDMOD NMOS (VTO = 3.18 KP = 1.70 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.95)
.MODEL MSTROMOD NMOS (VTO = 3.56 KP = 30 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 2.85 KP = 0.08 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 19.5 Rs = 0.10)
.MODEL RBREAKMOD RES (TC1 = 9.97e- 4TC2 = 5.07e-7)
.MODEL RDRAINMOD RES (TC1 = 8.52e-3 TC2 = 2.44e-5)
.MODEL RSLCMOD RES (TC1 = 3.28e-3 TC2 = 0)
.MODEL RSOURCEMOD RES (TC1 = 1.00e-3 TC2 = 0)
.MODEL RVTHRESMOD RES (TC1 = -2.08e-3 TC2 = -8.86e-6)
.MODEL RVTEMPMOD RES (TC1 = -3.08e- 3TC2 = 0)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.0 VOFF= -4.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.0 VOFF= -6.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.0 VOFF= 0.0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.0 VOFF= -3.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
GATE
1
RLGATE
LGATE
rev 4 Feb 2000
9
RGATE
CA
12
20
+
EVTEMP
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
8
6
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
51
5
5
MSTRO
+
-
14
51
21
RDRAIN
RSLC1
50
ESLC
16
8
MMED
8
EBREAK
IT
DBREAK
RSOURCE
17
MWEAK
RVTHRES
RBREAK
11
+
-
17
18
7
+
-
18
22
RVTEMP
19
RLSOURCE
DBODY
LSOURCE
VBAT
RLDRAIN
LDRAIN
HUFA75831SK8 Rev. B
SOURCE
DRAIN
2
3