M368L3223ETM-CC5 SAMSUNG [Samsung semiconductor], M368L3223ETM-CC5 Datasheet - Page 11

• Manufacturer Part Number: M368L3223ETM-CC5
• Description: 184pin Unbuffered Module based on 256Mb E-die 64/72-bit ECC/Non ECC
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note : 1. VID is the magnitude of the difference between the input level on CK and the input on CK.
AC Operating Conditions
Input/Output Capacitance
256MB, 512MB DDR466 Unbuffered DIMM
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE )
Input capacitance(CKE0)
Input capacitance( CS0)
Input capacitance( CLK0, CLK1,CLK2)
Input capacitance(DM0~DM7, DM8(for ECC))
Data & DQS input/output capacitance(DQ0~DQ63)
Data input/output capacitance (CB0~CB7)
Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE )
Input capacitance(CKE0,CKE1)
Input capacitance( CS0, CS1)
Input capacitance( CLK0, CLK1,CLK2)
Input capacitance(DM0~DM7, DM8(for ECC))
Data & DQS input/output capacitance(DQ0~DQ63)
Data input/output capacitance (CB0~CB7)
2. The value of V
3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in
simulation. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz.
Parameter/Condition
IX
Parameter
Parameter
is expected to equal 0.5*V
Output
Output Load Circuit (SSTL_2)
DDQ
Z0=50Ω
of the transmitting device and must track variations in the DC level of the same.
C
LOAD
Symbol
Symbol
Cout1
Cout2
Cout1
Cout2
CIN1
CIN2
CIN3
CIN4
CIN5
CIN1
CIN2
CIN3
CIN4
CIN5
=30pF
V
tt
Symbol
VIH(AC)
VIL(AC)
VID(AC)
VIX(AC)
=0.5*V
R
Min
Min
M368L6423ETM
M368L3223ETM
DDQ
65
42
42
28
10
10
49
42
42
25
T
6
6
-
-
=50Ω
0.5*VDDQ-0.2
VREF + 0.31
V
=0.5*V
REF
Min
0.7
Revision 1.0 December, 2003
DDQ
Max
Max
81
50
50
34
12
12
57
50
50
30
(VDD=2.6V, VDDQ=2.6V, TA= 25°C, f=1MHz)
7
7
-
-
0.5*VDDQ+0.2
VREF - 0.31
VDDQ+0.6
Min
Min
M381L6423ETM
M381L3223ETM
69
44
44
28
10
10
10
51
44
44
25
Max
6
6
6
DDR SDRAM
Max
Max
87
53
53
34
12
12
12
60
53
53
30
7
7
7
Unit
V
V
V
V
Unit
Unit
Note
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
pF
1
2