FDS4470_06 FAIRCHILD [Fairchild Semiconductor], FDS4470_06 Datasheet

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FDS4470_06

Manufacturer Part Number
FDS4470_06
Description
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDS4470_06.pdf (6 pages)
FDS4470
40V N-Channel PowerTrench
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
• DC/DC converter
©2006 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
θJA
θJA
θJC
, T
Device Marking
STG
N-Channel
FDS4470
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
MOSFET
D
DS(ON)
D
Pin 1
D
D
and fast switching speed.
SO-8
D
D
– Continuous
– Pulsed
has
D
FDS4470
D
Device
Parameter
S
been
S
S
S
S
S
®
designed
G
G
MOSFET
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
• 12.5 A, 40 V. R
• Low gate charge (45 nC)
• High performance trench technology for extremely
• High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
DS(ON)
–55 to +175
12mm
Ratings
+30/–20
12.5
125
2.5
1.4
1.2
40
50
50
25
= 9 mΩ @ V
December 2006
4
3
2
1
GS
= 10 V
FDS4470 Rev D1 (W)
2500 units
Quantity
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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FDS4470_06 Summary of contents

Page 1

FDS4470 40V N-Channel PowerTrench General Description This N-Channel MOSFET has specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R and fast switching ...

Page 2

Electrical Characteristics Symbol Parameter Drain-Source Avalanche Ratings E Drain-Source Avalanche Energy AS I Drain-Source Avalanche Current AS Off Characteristics BV Drain–Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature DSS ΔT Coefficient J I Zero Gate Voltage Drain Current DSS I ...

Page 3

Electrical Characteristics Symbol Parameter Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current S Drain–Source Diode Forward V SD Voltage t Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr Notes ...

Page 4

Typical Characteristics 10V 5. 6. 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 12.5A D 1.8 V ...

Page 5

Typical Characteristics 10V I = 12. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10s ...

Page 6

FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build ...

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