IRFW/IZ44A FAIRCHILD [Fairchild Semiconductor], IRFW/IZ44A Datasheet - Page 2

• Manufacturer Part Number: IRFW/IZ44A
• Description: Advanced Power MOSFET
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

IRFW/IZ44A
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=0.4mH, I
(3) I
(4) Pulse Test: Pulse Width = 250 s, Duty Cycle
(5) Essentially Independent of Operating Temperature
BV/ T
BV
V
R
t
t
V
I
I
C
C
C
Q
I
GS(th)
DS(on)
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
I
SM
t
t
t
S
SD
rr
oss
rss
DSS
iss
fs
r
f
gs
gd
rr
SD
g
J
50A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=50A, V
350A/ s, V
Characteristic
Characteristic
DD
=25V, R
DD
G
BV
=27 , Starting T
DSS
(T
, Starting T
C
=25 C unless otherwise specified)
(1)
(4)
2%
J
Min.
Min.
J
2.0
=25 C
=25 C
60
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.063
1770
Typ.
Typ.
32.6
12.3
23.6
0.24
590
220
20
16
68
70
64
85
--
--
--
--
--
--
--
--
--
--
0.024
Max. Units
2300
Max. Units
-100
100
100
680
255
140
140
200
4.0
1.8
10
50
40
40
83
--
--
--
--
--
--
--
V/ C
nA
nC
pF
ns
ns
V
V
A
V
A
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
=250 A
=50A
F
=25 C,I
=25 C,I
=9.1
/dt=100A/ s
=0V,I
=5V,I
=20V
=-20V
=60V
=48V,T
=10V,I
=30V,I
=0V,V
=30V,I
=48V,V
See Fig 13
Test Condition
Test Condition
See Fig 5
D
D
S
F
DS
=250 A
=250 A
D
D
D
=50A
=50A,V
C
GS
=25A
=25A
=50A,
=150 C
=25V,f =1MHz
=10V,
See Fig 7
GS
=0V
(4) (5)
(4) (5)
(4)
(4)
(4)