IS43DR86400C-25DBLI-TR ISSI, IS43DR86400C-25DBLI-TR Datasheet - Page 32

• Manufacturer Part Number: IS43DR86400C-25DBLI-TR
• Description: DRAM 512M, 1.8V, 400Mhz 64Mx8 DDR2
• Manufacturer: ISSI

Specifications of IS43DR86400C-25DBLI-TR

• Rohs: yes
• Data Bus Width: 8 bit
• Organization: 64 M x 8
• Package / Case: BGA-60
• Memory Size: 512 Mbit
• Maximum Clock Frequency: 400 MHz
• Access Time: 400 ps
• Supply Voltage - Max: 1.9 V
• Supply Voltage - Min: 1.7 V
• Maximum Operating Current: 135 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT

IS43/46DR86400C, IS43/46DR16320C
FUNCTIONAL DESCRIPTION
Power-up and Initialization
DDR2 SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation. For DDR2 SDRAMs, both bits BA0 and BA1 must be decoded for Mode/
Extended Mode Register Set (MRS/EMRS) commands. Users must initialize all four Mode Registers. The registers
may be initialized in any order.
Power-up and Initialization Sequence
The following sequence is required for Power-up and Initialization.
a) Either one of the following sequence is required for Power-up.
a1) While applying power, attempt to maintain CKE below 0.2 x VDDQ and ODT*1 at a LOW state (all other
a2) While applying power, attempt to maintain CKE below 0.2 x VDDQ and ODT*1 at a LOW state, all other inputs
- Apply VDD/VDDL before or at the same time as VDDQ.
- VDD/VDDL voltage ramp time must be no greater than 200ms from when VDD ramps from 300mV to VDD min
- Apply VDDQ before or at the same time as VTT.
- The VDDQ voltage ramp time from when VDD min is achieved on VDD to when VDDQ min is achieved on VDDQ
- VREF must track VDDQ/2, VREF must be within +/- 300mv with respect to VDDQ/2 during supply ramp time.
- VDDQ ≥ VREF must be met at all times.
- Apply VTT.
- The VTT voltage ramp time from when VDDQ min is achieved on VDDQ to when VTT min is achieved on VTT must
b) Start clock and maintain stable condition.
c) For the minimum of 200ms after stable power (VDD, VDDL, VDDQ, VREF and VTT are between their minimum and
maximum values as stated in "Recommended DC operating conditions" (SSTL_1.8)) and stable clock (CK, CK), then
apply NOP or Deselect & take CKE HIGH.
d) Wait minimum of 400ns then issue precharge all command. NOP or Deselect applied during 400 ns period.
e) Issue an EMRS command to EMR(2).
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inputs may be undefined.) The VDD voltage ramp time must be no greater than 200 ms from when VDD ramps
from 300 mV to VDD min; and during the VDD voltage ramp, |VDD-VDDQ| ≤ 0.3 volts. Once the ramping of the
supply voltages is complete (when VDDQ crosses VDDQ min), the supply voltage specifications provided in
"Recommended DC operating conditions" (SSTL_1.8), prevail.
- VDD, VDDL and VDDQ are driven from a single power converter output, AND
- VTT is limited to 0.95V max, AND
- VREF tracks VDDQ/2, VREF must be within +/- 300mV with respect to VDDQ/2 during supply ramp time.
- VDDQ ≥ VREF must be met at all times.
may be undefined, voltage levels at I/Os and outputs must be less than VDDQ during voltage ramp time to avoid
DRAM latch-up. During the ramping of the supply voltages, VDD ≥ VDDL ≥ VDDQ must be maintained and is
applicable to both AC and DC levels until the ramping of the supply voltages is complete, which is when VDDQ
crosses VDDQ min. Once the ramping of the supply voltages is complete, the supply voltage specifications provided
in "Recommended DC operating conditions" (SSTL_1.8), prevail.
must be no greater than 500ms.
(Note: While VDD is ramping, current may be supplied from VDD through the DRAM to VDDQ.)
be no greater than 500ms.
Integrated Silicon Solution, Inc. — www.issi.com
3/19/2013
Rev. A