MK40DN512VMD10 Freescale Semiconductor, MK40DN512VMD10 Datasheet - Page 34

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MK40DN512VMD10

Manufacturer Part Number
MK40DN512VMD10
Description
ARM Microcontrollers - MCU KINETIS 512K USB LCD
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MK40DN512VMD10

Rohs
yes
Core
ARM Cortex M4
Processor Series
K40
Data Bus Width
32 bit
Maximum Clock Frequency
100 MHz
Program Memory Size
512 KB
Data Ram Size
128 KB
On-chip Adc
Yes
Operating Supply Voltage
1.71 V to 3.6 V
Operating Temperature Range
- 40 C to + 105 C
Package / Case
MAPBGA-144
Mounting Style
SMD/SMT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MK40DN512VMD10
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Company:
Part Number:
MK40DN512VMD10
Quantity:
111
Peripheral operating requirements and behaviors
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
34
t
t
t
t
t
t
t
t
t
t
t
eewr16b128k
eewr16b256k
t
eewr32b128k
eewr32b256k
t
t
eewr8b128k
eewr8b256k
eewr16b32k
eewr16b64k
eewr32b32k
eewr32b64k
eewr16bers
eewr32bers
Symbol
eewr8b32k
eewr8b64k
I
Symbol
I
DD_PGM
DD_ERS
Byte-write to FlexRAM execution time:
Word-write to erased FlexRAM location
execution time
Word-write to FlexRAM execution time:
Longword-write to erased FlexRAM location
execution time
Longword-write to FlexRAM execution time:
Description
Average current adder during high voltage
flash programming operation
Average current adder during high voltage
flash erase operation
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
Description
Table 21. Flash command timing specifications (continued)
Table 22. Flash high voltage current behaviors
K40 Sub-Family Data Sheet, Rev. 2, 12/2012.
Longword-write to FlexRAM for EEPROM operation
Word-write to FlexRAM for EEPROM operation
Min.
Min.
1000
1000
1200
1900
Typ.
385
475
650
175
385
475
650
360
630
810
Typ.
2.5
1.5
1800
2000
2400
3200
1800
2000
2400
3200
2050
2250
2675
3500
Max.
260
540
Freescale Semiconductor, Inc.
Max.
6.0
4.0
Unit
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Unit
mA
mA
Notes

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