MK40DN512VMD10 Freescale Semiconductor, MK40DN512VMD10 Datasheet - Page 35

• Manufacturer Part Number: MK40DN512VMD10
• Description: ARM Microcontrollers - MCU KINETIS 512K USB LCD
• Manufacturer: Freescale Semiconductor

Specifications of MK40DN512VMD10

• Rohs: yes
• Core: ARM Cortex M4
• Processor Series: K40
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 100 MHz
• Program Memory Size: 512 KB
• Data Ram Size: 128 KB
• On-chip Adc: Yes
• Operating Supply Voltage: 1.71 V to 3.6 V
• Operating Temperature Range: - 40 C to + 105 C
• Package / Case: MAPBGA-144
• Mounting Style: SMD/SMT

6.4.1.4 Reliability specifications
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the flash
memory module to obtain an effective endurance increase for the EEPROM data. The
built-in EEPROM record management system raises the number of program/erase cycles
that can be attained prior to device wear-out by cycling the EEPROM data through a
larger EEPROM NVM storage space.
Freescale Semiconductor, Inc.
n
n
n
t
n
n
t
t
t
nvmretee100
t
t
nvmwree128
nvmwree512
nvmretp10k
nvmretd10k
nvmretee10
nvmwree32k
n
n
Symbol
nvmwree16
nvmretp1k
nvmretd1k
nvmwree4k
nvmcycp
nvmcycd
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Write endurance
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
Table 23. NVM reliability specifications
K40 Sub-Family Data Sheet, Rev. 2, 12/2012.
FlexRAM as EEPROM
Program Flash
Data Flash
1.27 M
315 K
10 M
80 M
10 K
10 K
35 K
Min.
20
20
20
5
5
5
Peripheral operating requirements and behaviors
400 M
175 K
1.6 M
6.4 M
Typ.
50 M
j
50 K
50 K
100
100
100
≤ 125°C.
50
50
50
1
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
cycles
cycles
writes
writes
writes
writes
writes
years
years
years
years
years
years
Unit
Notes
2
2
3
35