MPXN2120VMG116 Freescale Semiconductor, MPXN2120VMG116 Datasheet - Page 30

• Manufacturer Part Number: MPXN2120VMG116
• Description: Microprocessors - MPU 32BIT2M NVM GATEWAY
• Manufacturer: Freescale Semiconductor

Specifications of MPXN2120VMG116

• Rohs: yes
• Processor Series: PXN21
• Core: e200
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 60 MHz
• Program Memory Size: 2 MB
• Data Ram Size: 32 KB
• Interface Type: CAN, I2C, SPI, UART
• Operating Supply Voltage: - 0.3 V to + 1.32 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: MAPBGA-208
• Number Of Programmable I/os: 155

Electrical characteristics
4.3
1
2
4.4
1
4.5
30
ESD for Human Body Model (HBM)
HBM Circuit Description
ESD for Field Induced Charge Model (FDCM)
Number of Pulses per pin:
Interval of Pulses
Spec
Spec
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification
requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
Assumes “typical usage” currents which will vary with application.
1
2
3
4
5
Positive Pulses (HBM)
Negative Pulses (HBM)
1
2
Maximum Operating Temperature Range — Die Junction Temperature
3.3 V Clock Synthesizer Voltage
3.3 V I/O Buffer Voltage
3.3–5.0 V Voltage Regulator Reference Voltage
3.3–5.0 V Analog Supply Voltage
Current which can be sourced by V
V
V
Minimum Required Gain from external circuit:
I
DD
RCSEL
RCSEL
ESD characteristics
VRC electrical specifications
DC electrical specifications
–40C
25C
150C
/ I_V
= V
= V
RCCTL
SSA
DDA
Characteristic
(@V
DD
1
Characteristic
= 1.32 V)
Characteristic
1
Table 8. VRC electrical specifications
PXN20 Microcontroller Data Sheet, Rev. 1
Table 9. DC electrical specifications
1
RCCTL
Table 7. ESD ratings
1
Symbol
R1
—
—
—
C
1, 2
I_V
Symbol
Symbol
V
BETA
V
V
V
DDSYN
RCCTL
DD33
250 (all other pins)
T
VRC
DDA
750 (corner pins)
J
Value
2000
1500
100
1
1
1
maximum of
V
VRC
3.0 V or
6.25 µA
–40.0
Min
Min
3.0
3.0
3.0
4.5
50
50
50
– 0.1
Freescale Semiconductor
20 mA
Max
500
150.0
Max
3.6
3.6
3.6
5.5
5.5
second
Ohm
Unit
pF
—
—
V
V
Units
—
Unit
o
V
V
V
V
C