STM32F051R4T6TR STMicroelectronics, STM32F051R4T6TR Datasheet - Page 43

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STM32F051R4T6TR

Manufacturer Part Number
STM32F051R4T6TR
Description
ARM Microcontrollers - MCU ARM Cortex M0 16kB 48 MHz CPU 8kB Flash
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32F051R4T6TR

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Electrical characteristics
6.3.2
6.3.3
44/105
Operating conditions at power-up / power-down
The parameters given in
temperature condition summarized in
Table 21.
Embedded reset and power control block characteristics
The parameters given in
temperature and V
Table 22.
1. The PDR detector monitors V
2. The product behavior is guaranteed by design down to the minimum V
3. Guaranteed by design, not tested in production.
Table 23.
t
V
RSTTEMPO
V
Symbol
POR/PDR
Symbol
PDRhyst
monitors only V
Symbol
t
t
VDDA
V
V
V
V
V
VDD
PVD0
PVD1
PVD2
PVD3
PVD4
(1)
(1)
(3)
V
V
V
V
Operating conditions at power-up / power-down
Embedded reset and power control block characteristics
Programmable voltage detector characteristics
DD
DD
DDA
DDA
Power on/power down
reset threshold
PDR hysteresis
Reset temporization
PVD threshold 0
PVD threshold 1
PVD threshold 2
PVD threshold 3
PVD threshold 4
DD
rise time rate
fall time rate
rise time rate
fall time rate
.
Parameter
DD
Parameter
supply voltage conditions summarized in
Table 21
Table 22
Parameter
DD
and also V
Doc ID 022265 Rev 3
are derived from tests performed under the ambient
are derived from tests performed under ambient
Falling edge
Rising edge
Table
DDA
(if kept enabled in the option bytes). The POR detector
Conditions
20.
Conditions
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Conditions
POR/PDR
Min
2.19
2.09
2.28
2.18
2.38
2.28
2.47
2.37
Min
Table
2.1
20
20
2
0
0
(1)
1.8
1.84
value.
Min
1.5
-
(2)
20.
2.18
2.08
2.28
2.18
2.38
2.28
2.48
2.38
2.58
2.48
Typ
Max
1.88
1.92
Typ
2.5
40
Max
STM32F051x
2.26
2.16
2.37
2.27
2.48
2.38
2.58
2.48
2.69
2.59
Max
1.96
2.0
4.5
(1)
-
Unit
µs/V
Unit
Unit
mV
ms
V
V
V
V
V
V
V
V
V
V
V
V

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