STM32F051R4T6TR STMicroelectronics, STM32F051R4T6TR Datasheet - Page 62

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STM32F051R4T6TR

Manufacturer Part Number
STM32F051R4T6TR
Description
ARM Microcontrollers - MCU ARM Cortex M0 16kB 48 MHz CPU 8kB Flash
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32F051R4T6TR

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STM32F051x
High-speed internal 14 MHz (HSI14) RC oscillator (dedicated to ADC)
Table 39.
1. V
2. Guaranteed by design, not tested in production.
3. Data based on characterization results, not tested in production.
Low-speed internal (LSI) RC oscillator
Table 40.
1.
2. Guaranteed by design, not tested in production.
Wakeup time from low-power mode
The wakeup times given in
oscillator. The event used to wake up the device depends from the current operating mode:
All timings are derived from tests performed under ambient temperature and V
voltage conditions summarized in
DuCy
ACC
I
I
t
t
Symbol
DD(HSI14)
Symbol
DD(LSI)
su(HSI14)
su(LSI)
V
f
TRIM
HSI14
DDA
DDA
f
Stop or sleep mode: the wakeup event is WFE
The wakeup pin used in stop and sleep mode is PA0 and in standby mode is the PA1.
LSI
(HSI14)
HSI14
= 3.3 V, T
(2)
(2)
= 3.3 V
HSI14 oscillator characteristics
LSI oscillator characteristics
Frequency
HSI14 user-trimming step
Duty cycle
Accuracy of the HSI14
oscillator (factory calibrated)
HSI14 oscillator startup time
HSI14 oscillator power
consumption
Frequency
LSI oscillator startup time
LSI oscillator power consumption
, T
A
A
= –40 to 105 °C unless otherwise specified.
= –40 to 105 °C unless otherwise specified.
Parameter
Parameter
Table 41
Doc ID 022265 Rev 3
Table
is measured on a wakeup phase with a 8-MHz HSI RC
20.
T
T
T
T
A
A
A
A
(1)
= –40 to 105 °C –4.2
= –10 to 85 °C
= 0 to 70 °C
= 25 °C
Conditions
(1)
Min
30
-
-
–3.2
–1.3
45
Min
1
0.75
–1
Typ
40
-
-
(2)
-
(2)
-
Electrical characteristics
(3)
(3)
(3)
Typ
100
14
-
-
-
-
-
-
-
Max
1.2
50
85
150
5.1
3.1
2.2
55
Max
1
2
DD
1
(2)
(2)
(2)
(3)
(3)
(3)
(2)
supply
Unit
kHz
MHz
Unit
µA
µs
63/105
µA
µs
%
%
%
%
%
%

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