CY7C1021DV33-10BVXI Cypress Semiconductor Corp, CY7C1021DV33-10BVXI Datasheet - Page 3

• Manufacturer Part Number: CY7C1021DV33-10BVXI
• Description: IC SRAM 1MBIT 10NS 48VFBGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1021DV33-10BVXI

• Memory Size: 1M (64K x 16)
• Package / Case: 48-VFBGA
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 60 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Memory Configuration: 64K X 16
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: FBGA
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2006

Document #: 38-05460 Rev. *F
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65C to +150C
Ambient Temperature with
Power Applied............................................. –55C to +125C
Supply Voltage on V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
DC Electrical Characteristics
Capacitance
Thermal Resistance
Notes
Parameter
V
V
V
V
I
I
I
I
I
C
C


4. V
5. Tested initially and after any design or process changes that may affect these parameters.
IX
OZ
CC
SB1
SB2
OH
OL
IH
IL
IN
OUT
JA
JC
Parameter
Parameter
IL
(min.) = –2.0V and V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
V
Supply Current
Automatic CE Power-Down
Current —TTL Inputs
Automatic CE Power-Down
Current —CMOS Inputs
CC
[4]
[5]
[4]
......................................–0.3V to V
Operating
Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
...................................–0.3V to V
Description
CC
IH
(max) = V
to Relative GND
Description
Description
[5]
CC
[4]
+ 1V for pulse durations of less than 5 ns.
Over the Operating Range
[4]
V
V
GND < V
GND < V
V
I
f = f
Max. V
V
Max. V
V
OUT
CC
CC
CC
IN
IN
.... –0.3V to +4.6V
MAX
> V
> V
= Min., I
= Min., I
= Max.,
T
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
= 0 mA,
A
CC
CC
CC
IH
= 25C, f = 1 MHz, V
= 1/t
Test Conditions
I
I
, CE > V
, CE > V
or V
– 0.3V or V
< V
< V
CC
CC
OH
OL
RC
CC
CC
IN
+0.3V
+0.3V
= 8.0 mA
, Output Disabled
= –4.0 mA
< V
IH
CC
Test Conditions
Test Conditions
IL
IN
, f = f
– 0.3V,
< 0.3V, f = 0
100 MHz
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Automotive-A
Automotive-E –40 C to +125 C
83 MHz
66 MHz
40 MHz
MAX
CC
Industrial
= 3.3V
Range
–10 (Ind’l/Auto-A)
Min.
0.3
2.4
2.0
1
1
–40 C to +85 C
–40 C to +85 C
Temperature
Ambient
V
CC
Max.
0.4
0.8
+1
+1
60
55
45
30
10
3
+ 0.3
59.52
36.75
SOJ
Max.
CY7C1021DV33
8
8
TSOP II VFBGA
Min.
0.3
53.91
21.24
2.4
2.0
5
5
–12 (Auto-E)
3.3V  0.3V
V
CC
V
CC
36
Max.
9
100
0.4
0.8
+5
+5
Page 3 of 13
90
60
50
15
-
+ 0.3
Unit
pF
pF
Speed
10 ns
10 ns
12 ns
C/W
C/W
Unit
Unit
mA
mA
mA
mA
mA
mA
A
A
V
V
V
V
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