CY7C1021DV33-10BVXI Cypress Semiconductor Corp, CY7C1021DV33-10BVXI Datasheet - Page 8

• Manufacturer Part Number: CY7C1021DV33-10BVXI
• Description: IC SRAM 1MBIT 10NS 48VFBGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1021DV33-10BVXI

• Memory Size: 1M (64K x 16)
• Package / Case: 48-VFBGA
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 60 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Memory Configuration: 64K X 16
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: FBGA
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2006

Document #: 38-05460 Rev. *F
Switching Waveforms
Write Cycle No. 3 (WE Controlled, OE LOW)
Truth Table
CE
H
L
L
L
L
ADDRESS
BHE, BLE
DATA I/O
OE
X
X
H
X
L
WE
CE
WE
X
H
H
X
L
X
L
L
H
L
L
H
X
H
BLE
X
L
H
L
L
H
L
X
H
BHE
t
SA
(continued)
High-Z
Data Out
Data Out
High-Z
Data In
Data In
High-Z
High-Z
High-Z
I/O
0
–I/O
7
t
AW
High-Z
Data Out
High-Z
Data Out
Data In
High-Z
Data In
High-Z
High-Z
I/O
t
SCE
8
–I/O
t
t
BW
t
WC
HZWE
15
t
PWE
Power-down
Read – All bits
Read – Lower bits only
Read – Upper bits only
Write – All bits
Write – Lower bits only
Write – Upper bits only
Selected, Outputs Disabled
Selected, Outputs Disabled
t
SD
Mode
t
HD
t
LZWE
t
HA
CY7C1021DV33
Standby (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
Active (I
Power
Page 8 of 13
CC
CC
CC
CC
CC
CC
CC
CC
SB
)
)
)
)
)
)
)
)
)
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