CY7C1021DV33-10BVXI Cypress Semiconductor Corp, CY7C1021DV33-10BVXI Datasheet - Page 4

• Manufacturer Part Number: CY7C1021DV33-10BVXI
• Description: IC SRAM 1MBIT 10NS 48VFBGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1021DV33-10BVXI

• Memory Size: 1M (64K x 16)
• Package / Case: 48-VFBGA
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 60 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Memory Configuration: 64K X 16
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: FBGA
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2006

CY7C1021DV33
AC Test Loads and Waveforms
[6]
ALL INPUT PULSES
3.0V
Z = 50
90%
90%
OUTPUT
10%
10%
50 
30 pF*
GND
* CAPACITIVE LOAD CONSISTS
1.5V
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
Fall Time: 1 V/ns
Rise Time: 1 V/ns
(b)
(a)
High-Z characteristics:
R 317
3.3V
OUTPUT
R2
5 pF
351
(c)
Note
6. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c).
Document #: 38-05460 Rev. *F
Page 4 of 13
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