CY7C1021DV33-10BVXI Cypress Semiconductor Corp, CY7C1021DV33-10BVXI Datasheet - Page 7

• Manufacturer Part Number: CY7C1021DV33-10BVXI
• Description: IC SRAM 1MBIT 10NS 48VFBGA
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1021DV33-10BVXI

• Memory Size: 1M (64K x 16)
• Package / Case: 48-VFBGA
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 60 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Memory Configuration: 64K X 16
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: FBGA
• No. Of Pins: 48
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2006

Document #: 38-05460 Rev. *F
Switching Waveforms
Write Cycle No. 1 (CE Controlled)
Write Cycle No. 2 (BLE or BHE Controlled)
Notes
17. Data I/O is high impedance if OE or BHE and/or BLE = V
18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
ADDRESS
ADDRESS
BHE, BLE
BHE, BLE
DATA I/O
DATA I/O
WE
WE
CE
CE
(continued)
t
SA
t
SA
[17, 18]
IH
.
t
AW
t
AW
t
WC
t
WC
t
t
BW
t
PWE
t
SCE
SCE
t
PWE
t
BW
t
SD
t
SD
t
HD
t
HD
t
HA
t
CY7C1021DV33
HA
Page 7 of 13
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