CY7C1350G-133AXC Cypress Semiconductor Corp, CY7C1350G-133AXC Datasheet - Page 9

IC SRAM 4.5MBIT 133MHZ 100LQFP

CY7C1350G-133AXC

Manufacturer Part Number
CY7C1350G-133AXC
Description
IC SRAM 4.5MBIT 133MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet

Specifications of CY7C1350G-133AXC

Memory Size
4.5M (128K x 36)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
4 ns
Maximum Clock Frequency
133 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
225 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Ports
4
Operating Supply Voltage
3.3 V
Memory Configuration
128K X 36
Clock Frequency
133MHz
Supply Voltage Range
3.135V To 3.6V
Memory Case Style
TQFP
No. Of Pins
100
Rohs Compliant
Yes
Density
4Mb
Access Time (max)
4ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
133MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
17b
Package Type
TQFP
Operating Temp Range
0C to 70C
Supply Current
225mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-2116
CY7C1350G-133AXC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1350G-133AXC
Manufacturer:
Cypress
Quantity:
5 000
Part Number:
CY7C1350G-133AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1350G-133AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Electrical Characteristics
Over the Operating Range
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Note
Document Number: 38-05524 Rev. *I
I
I
C
C
C
14. Tested initially and after any design or process changes that may affect these parameters.
Parameter
SB3
SB4
Parameter
IN
CLK
I/O
JA
JC
Parameter
OUTPUT
OUTPUT
3.3 V I/O Test Load
2.5 V I/O Test Load
Automatic CE
power-down
current—CMOS inputs
Automatic CE
power-down
current—TTL inputs
Thermal resistance (junction to
ambient)
Thermal resistance (junction to
case)
Input capacitance
Clock input capacitance
Input/output capacitance
[14]
Description
Z
Z
0
0
= 50 
= 50 
Description
Description
[12, 13]
(a)
(a)
V
V
[14]
T
T
= 1.25 V
= 1.5 V
(continued)
R
R
L
L
= 50 
= 50 
V
V
f = f
V
V
DD
IN
DD
IN
MAX
 0.3 V or V
 V
OUTPUT
OUTPUT
= Max, device deselected, or
= Max, device deselected,
3.3 V
2.5 V
IH
= 1/t
INCLUDING
INCLUDING
or V
Test conditions follow standard
test methods and procedures for
measuring thermal impedance,
per EIA/JESD51.
JIG AND
JIG AND
SCOPE
SCOPE
CYC
IN
V
5 pF
5 pF
DD
IN
T
 V
A
> V
Test Conditions
= 3.3 V, V
= 25 °C, f = 1 MHz,
Test Conditions
IL
Test Conditions
, f = 0
DDQ
(b)
(b)
R = 317 
R = 1667 
– 0.3 V
R = 351 
R =1538 
DDQ
= 3.3 V
10-ns cycle, 100 MHz
All speeds
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
V
GND
GND
DDQ
V
DDQ
 1 ns
 1 ns
10%
10%
100 TQFP
100 TQFP
Package
30.32
Max
6.85
5
5
5
ALL INPUT PULSES
ALL INPUT PULSES
90%
90%
(c)
(c)
Min
119 BGA
119 BGA
Package
Max
34.1
14.0
5
5
7
CY7C1350G
90%
90%
Max
105
95
85
75
65
45
10%
10%
 1 ns
 1 ns
Page 9 of 18
°C/W
°C/W
Unit
Unit
pF
pF
pF
Unit
mA
mA
mA
mA
mA
mA
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