MT46V8M16TG-6T L:D TR Micron Technology Inc, MT46V8M16TG-6T L:D TR Datasheet - Page 30

• Manufacturer Part Number: MT46V8M16TG-6T L:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V8M16TG-6T L:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1042-2

Figure 13:
Figure 14:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
Reduced Drive Pull-Down Characteristics
Reduced Drive Pull-Up Characteristics
40. The voltage levels used are derived from a minimum V
41.
42. V
43.
39d. The driver pull-up current variation, within nominal voltage and temperature
39e. The full ratio variation of the MAX-to-MIN pull-up and pull-down current should
39f. The full ratio variation of the nominal pull-up to pull-down current should be
80
70
60
50
40
30
20
10
load. In practice, the voltage levels obtained from a properly terminated bus will pro-
vide significantly different voltage values.
V
width can not be greater than 1/3 of the cycle rate. VIL undershoot: VIL (MIN) =
for a pulse width ≤ 3ns, and the pulse width can not be greater than 1/3 of the cycle
rate.
t
prevail over
HZ (MAX) will prevail over
0
-10
-20
-30
-40
-50
-60
-70
-80
IH
DD
0 . 0
0
0.0
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 14 on page 30.
be between 0.71 and 1.4 for device drain-to-source voltages from 0.1V to 1.0V at
the same voltage and temperature.
unity ±10 percent, for device drain-to-source voltages from 0.1V to 1.0V.
overshoot: V
and V
DD
0 . 5
t
0.5
DQSCK (MIN) +
Q must track each other.
IH
(MAX) = V
1 . 0
1.0
V
DD
V
Q - V
OUT
30
t
(V)
OUT
DQSCK (MAX) +
t
RPRE (MAX) condition.
DD
(V)
1 . 5
1.5
Q + 1.5V for a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
2.0
2.0
128Mb: x4, x8, x16 DDR SDRAM
t
RPST (MAX) condition.
pulse width ≤ 3ns, and the pulse
2.5
2.5
DD
level and the referenced test
©2004 Micron Technology, Inc. All rights reserved.
t
LZ (MIN) will
–
1.5V