MT46V8M16TG-6T L:D TR Micron Technology Inc, MT46V8M16TG-6T L:D TR Datasheet - Page 74

• Manufacturer Part Number: MT46V8M16TG-6T L:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V8M16TG-6T L:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1042-2

Figure 47:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
COMMAND
ADDRESS
BA0, BA1
DQ 5
DQS
CK#
CKE
A10
DM
CK
t
t
WRITE – DM Operation
IS
IS
NOP
T0
t
1
IH
t
IH
Notes:
t
Bank x
t
IS
IS
Row
ACT
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 48 on page 75 for detailed DQ timing.
t
t
IH
IH
times.
t
CK
t
t
RCD
RAS
NOP
T2
1
t
CH
t
CL
WRITE
Bank x
t
3
IS
Col n
T3
t
t
DQSS (NOM)
2
IH
t
WPRES
74
t
DS
t
WPRE
NOP
T4
DI
b
1
t
DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP
T5
128Mb: x4, x8, x16 DDR SDRAM
t
DQSH
1
T5n
t
WPST
DON’T CARE
NOP
T6
1
©2004 Micron Technology, Inc. All rights reserved.
t WR
NOP
T7
TRANSITIONING DATA
1
Operations
ALL BANKS
ONE BANK
Bank x
T8
PRE
4
t RP