MT46V8M16TG-6T L:D TR Micron Technology Inc, MT46V8M16TG-6T L:D TR Datasheet - Page 40

• Manufacturer Part Number: MT46V8M16TG-6T L:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V8M16TG-6T L:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1042-2

Figure 16:
WRITE
Figure 17:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
READ Command
WRITE Command
Note:
Note:
The WRITE command is used to initiate a burst write access to an active row as shown in
Figure 17. The value on the BA0, BA1 inputs selects the bank, and the address provided
on inputs A0–Ai
and configuration, see Table 2 on page 2) selects the starting column location.
ADDRESS
BA0, BA1
ADDRESS
BA0, BA1
RAS#
CAS#
RAS#
CAS#
WE#
EN AP = enable auto precharge; DIS AP = disable auto precharge.
EN AP = enable auto precharge; and DIS AP = disable auto precharge.
WE#
CKE
CK#
CS#
CKE
A10
CK#
CS#
A10
CK
CK
HIGH
HIGH
DON’T CARE
DIS AP
EN AP
Bank
DIS AP
DON’T CARE
Col
EN AP
Bank
Col
(
where Ai is the most significant column address bit for a given density
40
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x4, x8, x16 DDR SDRAM
©2004 Micron Technology, Inc. All rights reserved.
Commands