MT46V8M16TG-6T L:D TR Micron Technology Inc, MT46V8M16TG-6T L:D TR Datasheet - Page 57

• Manufacturer Part Number: MT46V8M16TG-6T L:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V8M16TG-6T L:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1042-2

Figure 30:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
READ-to-WRITE
Notes:
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
DQS
CK#
CK#
DM
DM
CK#
DM
DQ
DQ
DQ
CK
CK
CK
1. Page remains open.
2. DO n = data-out from column n; DI b = data-in from column b.
3. BL = 4 (applies for bursts of 8 as well; if BL = 2, the BURST command shown can be NOP).
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal
Bank a,
READ
Bank,
READ
Bank,
READ
Col n
Col n
Col n
T0
T0
T0
CL = 2
BST
BST
BST
T1
T1
T1
CL = 2.5
t
AC,
1
1
1
CL = 3
t
DQSCK, and
57
NOP
NOP
NOP
T2
T2
T2
DO
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
T2n
T2n
DO
n
128Mb: x4, x8, x16 DDR SDRAM
WRITE
NOP
Bank,
Col b
T3
T3
T3
NOP
t
(NOM)
DON’T CARE
DQSS
DO
n
T3n
T3n
WRITE
Bank,
WRITE
Col b
T4
T4
T4
NOP
DI
b
©2004 Micron Technology, Inc. All rights reserved.
t
(NOM)
DQSS
t
(NOM)
TRANSITIONING DATA
DQSS
T4n
Operations
T5
T5
T5
DI
NOP
NOP
DI
NOP
b
b
T5n
T5n
T5n