MT46V8M16TG-6T L:D TR Micron Technology Inc, MT46V8M16TG-6T L:D TR Datasheet - Page 35

• Manufacturer Part Number: MT46V8M16TG-6T L:D TR
• Description: IC DDR SDRAM 128MBIT 6NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V8M16TG-6T L:D TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 6ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1042-2

Table 27:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
Any
Idle
Row active
Read (auto-
precharge
disabled)
Write (auto-
precharge
disabled)
Current
State
Truth Table 3 – Current State Bank n – Command to Bank n
Notes: 1–6 apply to entire table; Notes appear below
CS# RAS# CAS#
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
Notes:
H
H
H
H
H
H
H
H
X
L
L
L
L
L
L
1. This table applies when CKE
2. This table is bank-specific, except where noted (i.e., the current state is for a specific bank
3. Current state definitions:
4. The following states must not be interrupted by a command issued to the same bank. COM-
5. The following states must not be interrupted by any executable command; COMMAND
X
H
H
H
H
H
H
L
L
L
L
L
L
L
L
after
and the commands shown are those allowed to be issued to that bank when in that state).
Exceptions are covered in the notes below.
MAND INHIBIT or NOP commands, or allowable commands to the other bank should be
issued on any clock edge occurring during these states. Allowable commands to the other
bank are determined by its current state and Table 27 and according to Table 28 on
page 36.
INHIBIT or NOP commands must be applied on each positive clock edge during these states.
• Idle: The bank has been precharged, and
• Row active: A row in the bank has been activated, and
• Read: A READ burst has been initiated, with auto precharge disabled, and has not yet
• Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet
• Precharging: Starts with registration of a PRECHARGE command and ends when
• Row activating: Starts with registration of an ACTIVE command and ends when
• Read with auto-precharge enabled: Starts with registration of a READ command with
• Write with auto-precharge enabled: Starts with registration of a WRITE command with
bursts/accesses and no register accesses are in progress.
terminated or been terminated.
terminated or been terminated.
met. Once
met. Once
auto precharge enabled and ends when
will be in the idle state.
auto precharge enabled and ends when
will be in the idle state.
t
WE#
XSNR has been met (if the previous state was self refresh).
H
H
H
H
H
H
X
L
L
L
L
L
L
L
L
DESELECT (NOP/continue previous operation)
NO OPERATION (NOP/continue previous operation)
ACTIVE (select and activate row)
AUTO REFRESH
LOAD MODE REGISTER
READ (select column and start READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (deactivate row in bank or banks)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE (truncate READ burst, start PRECHARGE)
BURST TERMINATE
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE (truncate WRITE burst, start PRECHARGE)
t
t
RP is met, the bank will be in the idle state.
RCD is met, the bank will be in the “row active” state.
n-1
35
was HIGH and CKE
Command/Action
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
RP has been met. Once
RP has been met. Once
t
RP has been met.
128Mb: x4, x8, x16 DDR SDRAM
n
is HIGH (see Table 30 on page 38) and
t
RCD has been met. No data
©2004 Micron Technology, Inc. All rights reserved.
t
t
RP is met, the bank
RP is met, the bank
Commands
Notes
10, 12
10, 11
8, 11
t
10
10
10
10
7
7
8
8
9
t
RCD is
RP is