SIRA02DP-T1-GE3 Vishay/Siliconix, SIRA02DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIRA02DP-T1-GE3
• Description: MOSFET 30V 2mOhm@10V 50A N-Ch G-IV
• Manufacturer: Vishay/Siliconix

Specifications of SIRA02DP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 2 mOhms at 10 V
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Power Dissipation: 50 W
• Part # Aliases: SIRA02DP-GE3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 63773
S12-3075-Rev. B, 24-Dec-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.0025
0.0023
0.0021
0.0019
0.0017
0.0015
10
100
8
6
4
2
0
80
60
40
20
0
0
0.0
0
V
DS
I
D
= 10 V
= 10 A
On-Resistance vs. Drain Current
V
GS
16
0.5
16
V
= 10 V thru 4 V
V
GS
Output Characteristics
Q
DS
g
= 4.5 V
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
V
V
I
D
Gate Charge
DS
GS
- Drain Current (A)
32
1.0
32
= 15 V
= 10 V
V
For technical questions, contact:
GS
48
1.5
48
= 3 V
V
DS
V
GS
= 20 V
= 2 V
64
2.0
64
This document is subject to change without notice.
2.5
80
80
New Product
[e-mail]
1.7
1.5
1.3
1.1
0.9
0.7
7000
5600
4200
2800
1400
- 50
10
8
6
4
2
0
0
0.0
0
I
D
T
- 25
C
= 15 A
C
On-Resistance vs. Junction Temperature
= 125 °C
rss
5
0.8
V
V
T
0
DS
J
GS
Transfer Characteristics
C
T
C
- Junction Temperature (°C)
oss
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
iss
= 25 °C
10
25
Capacitance
1.6
50
15
2.4
75
V
Vishay Siliconix
GS
20
www.vishay.com/doc?91000
= 10 V
T
C
100
SiRA02DP
= - 55 °C
3.2
V
25
GS
125
www.vishay.com
= 4.5 V
150
4.0
30
3