SIRA02DP-T1-GE3 Vishay/Siliconix, SIRA02DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIRA02DP-T1-GE3
• Description: MOSFET 30V 2mOhm@10V 50A N-Ch G-IV
• Manufacturer: Vishay/Siliconix

Specifications of SIRA02DP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 2 mOhms at 10 V
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Power Dissipation: 50 W
• Part # Aliases: SIRA02DP-GE3

SiRA02DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
- 0.1
- 0.4
- 0.7
- 1.0
100
0.1
0.5
0.2
10
1
- 50
0.0
T
- 25
J
Source-Drain Diode Forward Voltage
= 150 °C
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
For technical questions, contact:
I
D
75
= 250 μA
0.8
0.01
100
I
0.1
T
D
10
100
J
1
= 5 mA
0.01
= 25 °C
I
Limited by R
D
I
DM
Limited
1.0
This document is subject to change without notice.
T
Single Pulse
125
* V
Limited
A
= 25 °C
GS
> minimum V
150
1.2
V
DS(on)
0.1
DS
- Drain-to-Source Voltage (V)
Safe Operating Area
New Product
*
GS
at which R
[e-mail]
1
BVDSS Limited
0.010
0.008
0.006
0.004
0.002
0.000
DS(on)
200
160
120
80
40
0
0.001
10
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 ms
100 ms
1 ms
1 s
10 s
100μs
DC
2
V
0.01
100
GS
- Gate-to-Source Voltage (V)
T
J
4
= 25 °C
Time (s)
0.1
T
J
= 125 °C
6
S12-3075-Rev. B, 24-Dec-12
Document Number: 63773
www.vishay.com/doc?91000
I
1
D
= 15 A
8
10
10