SIRA02DP-T1-GE3 Vishay/Siliconix, SIRA02DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIRA02DP-T1-GE3
• Description: MOSFET 30V 2mOhm@10V 50A N-Ch G-IV
• Manufacturer: Vishay/Siliconix

Specifications of SIRA02DP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 2 mOhms at 10 V
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Power Dissipation: 50 W
• Part # Aliases: SIRA02DP-GE3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63773
S12-3075-Rev. B, 24-Dec-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
90
72
54
36
18
0
0
25
Power, Junction-to-Case
T
C
- Case Temperature (°C)
50
D
is based on T
75
For technical questions, contact:
100
155
124
J(max)
93
62
31
0
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
This document is subject to change without notice.
125
Limited by Package
25
150
T
New Product
C
Current Derating*
50
- Case Temperature (°C)
[e-mail]
75
100
2.5
2.0
1.5
1.0
0.5
0.0
0
125
25
Power, Junction-to-Ambient
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
www.vishay.com/doc?91000
SiRA02DP
125
www.vishay.com
150
5