SIRA02DP-T1-GE3 Vishay/Siliconix, SIRA02DP-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SIRA02DP-T1-GE3
• Description: MOSFET 30V 2mOhm@10V 50A N-Ch G-IV
• Manufacturer: Vishay/Siliconix

Specifications of SIRA02DP-T1-GE3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 2.2 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 2 mOhms at 10 V
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Power Dissipation: 50 W
• Part # Aliases: SIRA02DP-GE3

PowerPAK
Document Number: 71655
Revison: 15-Feb-10
ECN: T10-0055-Rev. J, 15-Feb-10
DWG: 5881
DIM.
A1
D1
D2
D3
D4
D5
E1
E2
E3
K1
L1
E4
W
M
D
H
A
b
c
E
e
K
L
θ
®
SO-8, (SINGLE/DUAL)
1
2
3
4
Notes
1.
2
3.
MIN.
0.97
0.00
0.33
0.23
5.05
4.80
3.56
1.32
6.05
5.79
3.48
3.68
0.56
0.51
0.51
0.06
0.15
Inch will govern.
Dimensions exclusive of mold gate burrs.
Dimensions exclusive of mold flash and cutting burrs.
0°
W
E1
2
E
MILLIMETERS
0.125 TYP.
0.57 TYP.
3.98 TYP.
0.75 TYP.
1.27 BSC
1.27 TYP.
NOM.
1.04
0.41
0.28
5.15
4.90
3.76
1.50
6.15
5.89
3.66
3.78
0.61
0.61
0.13
0.25
-
-
-
L1
Detail Z
Z
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
6.25
5.99
3.84
3.91
0.71
0.71
0.20
0.36
A1
12°
-
0.038
0.000
0.013
0.009
0.199
0.189
0.140
0.052
0.238
0.228
0.137
0.145
0.022
0.020
0.020
0.002
0.006
MIN.
Backside View of Single Pad
0°
Backside View of Dual Pad
H
H
Package Information
E3
E3
D1
D2
D
E2
E2
0.0225 TYP.
0.157 TYP.
0.030 TYP.
0.050 TYP.
0.005 TYP.
0.050 BSC
E4
E4
INCHES
NOM.
0.041
0.016
0.011
0.203
0.193
0.148
0.059
0.242
0.232
0.144
0.149
0.024
0.024
0.005
0.010
-
-
-
K
K
Vishay Siliconix
L
L
1
2
3
4
1
2
3
4
www.vishay.com
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
0.246
0.236
0.151
0.154
0.028
0.028
0.008
0.014
12°
-
1