BSS316NH6327XT Infineon Technologies, BSS316NH6327XT Datasheet - Page 2

• Manufacturer Part Number: BSS316NH6327XT
• Description: MOSFET OptiMOS 2 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS316NH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Resistance Drain-source Rds (on): 160 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 1 ns
• Gate Charge Qg: 0.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 2.3 ns
• Typical Turn-off Delay Time: 5.8 ns
• Part # Aliases: BSS316N BSS316NH6327XTSA1 H6327

Rev 2.3
1)
of the PCB.
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
minimal footprint
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=1.1 A
DS
=V
=30 V, V
=30 V, V
=0 V, I
=30 V, V
=4.5 V, I
=10 V, I
|>2|I
GS
D
, I
|R
D
D
=250 µA
D
D
=3.7 µA
GS
GS
DS
DS(on)max
=1.4 A
=1.1 A
=0 V,
=0 V,
=0 V
1)
,
min.
1.2
30
-
-
-
-
-
-
Values
typ.
191
119
1.6
2.3
-
-
-
-
-
max.
250
100
100
280
160
2.0
1
-
-
BSS316N
Unit
K/W
V
μA
nA
mΩ
S
2011-07-06