BSS316NH6327XT Infineon Technologies, BSS316NH6327XT Datasheet - Page 6

• Manufacturer Part Number: BSS316NH6327XT
• Description: MOSFET OptiMOS 2 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS316NH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Resistance Drain-source Rds (on): 160 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 1 ns
• Gate Charge Qg: 0.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 2.3 ns
• Typical Turn-off Delay Time: 5.8 ns
• Part # Aliases: BSS316N BSS316NH6327XTSA1 H6327

Rev 2.3
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
300
250
200
150
100
10
10
10
50
DS
=f(T
0
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
-20
=1.4 A; V
5
20
98 %
GS
V
T
=10 V
DS
j
10
[°C]
[V]
60
j
Coss
typ
Ciss
=25°C
Crss
100
15
140
page 6
20
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
2.8
2.4
1.6
1.2
0.8
0.4
10
10
=f(T
SD
2
0
-1
-2
-3
1
0
-60
)
0
j
); V
D
j
DS
-20
=V
0.4
GS
; I
150 °C
20
D
=3.7 µA
2 %
V
T
SD
j
25 °C
0.8
[°C]
typ
[V]
60
98 %
25 °C, 98%
150 °C, 98%
100
1.2
BSS316N
140
2011-07-06
1.6