BSS316NH6327XT Infineon Technologies, BSS316NH6327XT Datasheet - Page 5

• Manufacturer Part Number: BSS316NH6327XT
• Description: MOSFET OptiMOS 2 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS316NH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Resistance Drain-source Rds (on): 160 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 1 ns
• Gate Charge Qg: 0.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 2.3 ns
• Typical Turn-off Delay Time: 5.8 ns
• Part # Aliases: BSS316N BSS316NH6327XTSA1 H6327

Rev 2.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
4
3
2
1
0
DS
GS
4
3
2
1
0
0
); T
0
); |V
10 V
j
=25 °C
GS
DS
0.5
|>2|I
4.5 V
1
D
|R
1
DS(on)max
2
V
V
150 °C
DS
GS
1.5
4 V
3.5 V
3.3 V
3 V
2.8 V
[V]
[V]
3
25 °C
2
4
2.5
page 5
5
3
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
400
350
300
250
200
150
100
50
D
=f(I
0
6
4
2
0
); T
0
0
3.5 V
D
j
); T
=25 °C
GS
j
=25 °C
1
2
4 V
I
I
D
D
4.5 V
2
4
[A]
[A]
5 V
7 V
10 V
3
6
BSS316N
2011-07-06
4
8