BSS316NH6327XT Infineon Technologies, BSS316NH6327XT Datasheet - Page 7

• Manufacturer Part Number: BSS316NH6327XT
• Description: MOSFET OptiMOS 2 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS316NH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Resistance Drain-source Rds (on): 160 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 1 ns
• Gate Charge Qg: 0.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 2.3 ns
• Typical Turn-off Delay Time: 5.8 ns
• Part # Aliases: BSS316N BSS316NH6327XTSA1 H6327

Rev 2.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
10
36
35
34
33
32
31
30
29
28
27
26
25
AV
-1
-2
1
0
-60
=f(T
10
); R
0
j
GS
); I
j(start)
=25 Ω
-20
D
=250 µA
10
20
1
t
T
AV
j
[°C]
[µs]
60
10
2
100
125 °C
100 °C
25 °C
140
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
V
8
7
6
5
4
3
2
1
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=1.4 A pulsed
g s
0.25
6 V
Q
Q
gate
g
Q
0.5
sw
[nC]
Q
15 V
24 V
g d
0.75
BSS316N
Q
g ate
2011-07-06
1