NDS356AP_L99Z Fairchild Semiconductor
NDS356AP_L99Z
Manufacturer Part Number
NDS356AP_L99Z
Description
MOSFET P-Ch LL FET Enhancement Mode
Manufacturer
Fairchild Semiconductor
Specifications of NDS356AP_L99Z
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.1 A
Resistance Drain-source Rds (on)
0.3 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Fall Time
17 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.5 W
Rise Time
17 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
53 ns
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