BUK9608-55B /T3 NXP Semiconductors, BUK9608-55B /T3 Datasheet - Page 2

• Manufacturer Part Number: BUK9608-55B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9608-55B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 0.007 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 86 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 203 W
• Rise Time: 123 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 131 ns
• Part # Aliases: BUK9608-55B,118

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK9608-55B
Product data sheet
Pin
1
2
3
mb
Type number
BUK9608-55B
BUK9608-55B/C1
It is not possible to make a connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Table 1.
[1]
Package
Name
D2PAK
D2PAK
Symbol
Avalanche ruggedness
E
Dynamic characteristics
Q
[1]
DS(AL)S
GD
Continuous current is limited by package.
Quick reference data
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 4 May 2010
Simplified outline
SOT404 (D2PAK)
Conditions
I
R
T
V
see
D
…continued
j(init)
GS
DS
GS
= 75 A; V
Figure 13
= 5 V; I
= 44 V; T
= 50 Ω; V
= 25 °C; unclamped
1
mb
2
3
D
sup
= 25 A;
j
GS
= 25 °C;
≤ 55 V;
= 5 V;
N-channel TrenchMOS logic level FET
Graphic symbol
BUK9608-55B
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
-
16
Version
SOT404
SOT404
Max Unit
352
-
2 of 14
mJ
nC