BUK9608-55B /T3 NXP Semiconductors, BUK9608-55B /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK9608-55B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9608-55B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 0.007 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 86 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 203 W
• Rise Time: 123 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 131 ns
• Part # Aliases: BUK9608-55B,118

NXP Semiconductors
BUK9608-55B
Product data sheet
Fig 1.
Fig 3.
(A)
I D
120
80
40
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
Capped at 75 A due to package
1
3
2
1
Capped at 75 A due to package
Limit R
100
DSon
= V
150
DS
/I
All information provided in this document is subject to legal disclaimers.
T
D
mb
03nn57
(°C)
200
Rev. 04 — 4 May 2010
10
Fig 2.
DC
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
V
DS
N-channel TrenchMOS logic level FET
(V)
50
t
100 μ s
1 ms
10 ms
100 ms
p
BUK9608-55B
= 10 μ s
100
03nn55
10
2
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
4 of 14