RF4E20N50S Fairchild Semiconductor
RF4E20N50S
Manufacturer Part Number
RF4E20N50S
Description
MOSFET TO-268
Manufacturer
Fairchild Semiconductor
Specifications of RF4E20N50S
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Resistance Drain-source Rds (on)
0.24 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-268AA
Fall Time
65 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
250 W
Rise Time
81 ns
Typical Turn-off Delay Time
85 ns
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