2N5550TAR_Q Fairchild Semiconductor
2N5550TAR_Q
Manufacturer Part Number
2N5550TAR_Q
Description
Transistors Bipolar - BJT NPN Si Transistor Epitaxial
Manufacturer
Fairchild Semiconductor
Specifications of 2N5550TAR_Q
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
160 V
Collector- Emitter Voltage Vceo Max
140 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
140 V
Maximum Dc Collector Current
0.6 A
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
60 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Continuous Collector Current
0.6 A
Maximum Power Dissipation
625 mW
Minimum Operating Temperature
- 55 C
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