PC48F4400P0TB0EE NUMONYX, PC48F4400P0TB0EE Datasheet - Page 54

• Manufacturer Part Number: PC48F4400P0TB0EE
• Description: IC FLASH 256MBIT 64EZBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of PC48F4400P0TB0EE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 512M (32Mx16)
• Speed: 95ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-EZBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 22: Synchronous Burst-Mode Four-Word Read Timing
Note:
15.4
Table 24: AC Write Specifications (Sheet 1 of 2)
Datasheet
54
W1
W2
W3
W4
W5
W6
W7
W8
W9
W10
W11
W12
W13
W14
W16
Write to Asynchronous Read Specifications
W18
Num
Address [A]
Data [D/Q]
ADV# [V]
WAIT [T]
OE# [G]
CLK [C]
CE# [E]
WAIT is driven per OE# assertion during synchronous array or non-array read. WAIT asserted during initial latency and
deasserted during valid data (RCR.10=0, WAIT asserted low).
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
PHWL
ELWL
WLWH
DVWH
AVWH
WHEH
WHDX
WHAX
WHWL
VPWH
QVVL
QVBL
BHWH
WHGL
WHQV
WHAV
Symbol
AC Write Specifications
R105
R105
R301
R302
R303
R101
R102
RST# high recovery to WE# low
CE# setup to WE# low
WE# write pulse width low
Data setup to WE# high
Address setup to WE# high
CE# hold from WE# high
Data hold from WE# high
Address hold from WE# high
WE# pulse width high
VPP setup to WE# high
VPP hold from Status read
WP# hold from Status read
WP# setup to WE# high
WE# high to OE# low
WE# high to read valid
WE# high to Address valid
A
R306
R15
R106
R7
R2
R3
R4
Parameter
y
R307
R304
Q0
R305
R304
Q1
t
AVQV
Min
150
200
200
50
50
50
20
0
0
0
0
0
0
0
0
+ 35
Q2
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Order Number: 320003-09
Q3
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
R17
R9
R10
R8
1,2,3,6,10
P33-65nm
1,2,3,6,8
1, 2, 12
1,2,3,7
1,2,3,7
Notes
1,2,3
1,2,4
1,2,5
1,2,9
Mar 2010
1,2,3
1,2