PC48F4400P0TB0EE NUMONYX, PC48F4400P0TB0EE Datasheet - Page 57

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PC48F4400P0TB0EE

Manufacturer Part Number
PC48F4400P0TB0EE
Description
IC FLASH 256MBIT 64EZBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of PC48F4400P0TB0EE

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
512M (32Mx16)
Speed
95ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-EZBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PC48F4400P0TB0EE
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
PC48F4400P0TB0EE
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
PC48F4400P0TB0EE
0
P33-65nm
Figure 26: Synchronous Read-to-Write Timing
Note:
Figure 27: Write-to-Synchronous Read Timing
Note:
Datasheet
57
Address [A]
Address [A]
Data [D/Q]
Data [D/Q]
WE# [W]
RST# [P]
ADV# [V]
WAIT [T]
WAIT [T]
OE# [G]
CE# [E}
CLK [C]
OE# [G]
CE# [E]
ADV#
WE#
CLK
WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR 10=0, WAIT asserted low). Clock is
ignored during write operation.
WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR.10=0, WAIT asserted low).
W1
R105
R105
W2
R301
R302
R303
R101
R102
R306
W5
R106
W3
W3
R2
R3
W4
Latency Count
D
R16
R7
W7
W6
R4
W18
W8
W19
W20
R307
R304
R11
R11
R302
R303
R104
R104
R301
Q
R306
R106
R312
R305
R11
R11
R13
R8
R104
R104
R15
R3
W2
R2
W22
W5
W21
R4
W3
W3
D
W8
R304
W7
W18
R307
W6
Order Number:320003-09
W9
W9
Q
W15
W21
W22
R304
D
R305
Mar 2010
Q

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