MT45W1MW16BAFB-856 WT TR Micron Technology Inc, MT45W1MW16BAFB-856 WT TR Datasheet - Page 27

• Manufacturer Part Number: MT45W1MW16BAFB-856 WT TR
• Description: IC PSRAM 16MBIT 85NS 54FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BAFB-856 WT TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 16M (1M x 16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 8:
PDF: 09005aef80ec6f63/Source: 09005aef80ec6f46
Burst CellularRAM_32__2.fm - Rev. E 10/05 EN
Voltage to Any Ball Except V
Voltage on V
Voltage on V
Storage Temperature (plastic)
Operating Temperature (case)
Soldering Temperature and Time
Wireless (see Note 1)
Industrial
10 seconds (solder ball only)
CC
CC
Absolute Maximum Ratings
Q Supply Relative to V
Supply Relative to V
Notes: 1. -30°C exceeds the CellularRAM Work Group 1.0 specification of -25°C.
Parameter
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
CC
2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
, V
CC
Q Relative to V
SS
SS
SS
27
-0.50V to (4.00V or V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-0.20V to +2.45V
-0.20V to +4.00V
-55ºC to +150ºC
-30ºC to +85ºC
-40ºC to +85ºC
CC
Rating
+260ºC
Configuration Registers
Q + 0.30V, whichever is less)
©2003 Micron Technology, Inc. All rights reserved.