FFP08S60S Fairchild Semiconductor, FFP08S60S Datasheet
FFP08S60S
Available stocks
Related parts for FFP08S60S
FFP08S60S Summary of contents
Page 1
... F08S60S FFP08S60STU ©2006 Fairchild Semiconductor Corporation FFP08S60S Rev. B 8A, 600V STEALTH =8A The FFP08S60S is STEALTH F characteristics silicon nitride passivated ion-implanted epi- taxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions. Their low stored charge and hyperfast soft recovery mini- mize ringing and electrical noise in many power switching cir- cuits reducing power loss in the switching transistors ...
Page 2
... I =8A, di/dt = 200A/µ Irr S factor Avalanche Energy (L = 40mH) AVL Notes: 1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFP08S60S Rev 25°C unless otherwise noted C Conditions = 25 ° 125 ° ° 125 °C ...
Page 3
... REVERSE VOLTAGE, V Figure 5. Typical Reverse Recovery Current 125 100 200 di/dt [A/ FFP08S60S Rev 25°C unless otherwise noted C 1E-4 1E =125 1E-7 C 1E-8 1E-9 2.0 2.4 2.8 3.2 [V] F Figure 4. Typical Reverse Recovery Time 100 f = 1MHz ...
Page 4
... Mechanical Dimensions FFP08S60S Rev. B TO-220-2L 4 Dimensions in Millimeters www.fairchildsemi.com ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ ...