fga180n33at Fairchild Semiconductor, fga180n33at Datasheet

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fga180n33at

Manufacturer Part Number
fga180n33at
Description
Fga180n33at 330v, 180a Pdp Trench Igbt
Manufacturer
Fairchild Semiconductor
Datasheet

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©2008 Fairchild Semiconductor Corporation
FGA180N33AT Rev. A
FGA180N33AT
330V, 180A PDP Trench IGBT
Features
• High Current Capability
• Low saturation voltage: V
• High input impedance
• RoHS compliant
Applications
PDP SYSTEM
Absolute Maximum Ratings
Notes:
1: Repetitive test, pulse width = 100usec, Duty = 0.1
* I
Thermal Characteristics
V
V
I
I
P
T
T
T
R
R
C
C pulse (1)
C_
stg
J
L
CES
GES
D
θJC
θJA
pulse limited by max Tj
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
C
CE(sat)
E
=1.03V @ I
Description
Parameter
TO-3P
C
= 40A
@ T
@ T
@ T
@ T
C
C
C
C
1
= 25
= 25
= 25
= 100
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
o
o
o
C
C
C
o
C
Typ.
-
-
G
-55 to +150
-55 to +150
Ratings
± 30
330
180
450
390
156
300
Max.
C
0.32
E
40
April 2008
www.fairchildsemi.com
Units
Units
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
C
C
C
tm

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fga180n33at Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FGA180N33AT Rev. A General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- = 40A C tions where low conduction and switching losses are essential. ...

Page 2

... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA180N33AT Rev. A Packaging Package Type Qty per Tube TO-3P Tube T = 25°C unless otherwise noted C Test Conditions = 0V 250µ ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.1 Common Emitter V = 15V GE 1.8 1.5 1.2 0.9 0 100 Collector-EmitterCase Temperature, T FGA180N33AT Rev. A Figure 2. Typical Output Characteristics 200 T 8V 150 100 [V] CE Figure 4. Transfer Characteristics 200 Common Emitter V ...

Page 4

... Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 500 t 100 r Common Emitter t V d(on Gate Resistance, R FGA180N33AT Rev. A Figure 8. Capacitance Characteristics GE 6000 Common Emitter 125 C C 4000 2000 [V] GE Figure 10. SOA Characteristics 1000 100 200V ...

Page 5

... Collector Current, I Figure 15. Turn off Switching SOA Characteristics 500 100 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V FGA180N33AT Rev. A Figure 14. Turn-off Characteristics vs. 1000 100 t r Common Emitter d(on 125 C 1 120 150 180 ...

Page 6

... Typical Performance Characteristics 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 FGA180N33AT Rev. A Figure 16.Transient Thermal Impedance of IGBT 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec Duty Factor t1/t2 Peak T = Pdm x Zthjc + 0.1 1 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions ø3.20 ±0.10 2.00 ±0.20 3.00 ±0.20 1.00 ±0.20 5.45TYP [5.45 ] ±0.30 FGA180N33AT Rev. A TO-3P 15.60 ±0.20 13.60 ±0.20 9.60 ±0.20 5.45TYP [5.45 ] ±0.30 7 4.80 ±0.20 +0.15 1.50 –0.05 1.40 ±0.20 +0.15 0.60 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA180N33AT Rev. A FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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