KSD2012 Fairchild Semiconductor, KSD2012 Datasheet

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KSD2012

Manufacturer Part Number
KSD2012
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2000 Fairchild Semiconductor International
Low Frequency Power Amplifier
• Complement to KSB1366
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
I
I
P
V
V
V
T
T
FE
C
B
BV
I
I
h
h
V
V
f
CBO
EBO
T
C
J
STG
CBO
CEO
EBO
Symbol
FE2
Symbol
FE1
CE
BE
CEO
Classification
(on)
(sat)
Classification
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (T
Junction Temperature
Storage Temperature
h
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
FE1
Parameter
T
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
C
=25 C)
KSD2012
100 ~ 200
Y
I
V
V
V
V
I
V
V
C
C
CB
EB
CE
CE
CE
CE
= 50mA, I
= 2A, I
Test Condition
= 7V, I
= 60V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
B
= 0.2A
C
C
C
C
C
B
E
= 0
= 0.5A
= 3A
= 0.5A
= 0.5A
= 0
= 0
1
1.Base
Min.
100
60
20
- 55 ~ 150
2.Collector
Value
150
0.3
60
60
25
150 ~ 320
3
7
TO-220F
Typ.
0.4
0.7
3
G
Max.
3.Emitter
100
320
10
1
1
Rev. A, February 2000
Units
W
Units
V
V
V
A
A
MHz
C
C
V
V
V
A
A

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KSD2012 Summary of contents

Page 1

... FE1 h FE2 V (sat) Collector-Emitter Saturation Voltage CE V (on) Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T h Classification FE Classification h FE1 ©2000 Fairchild Semiconductor International KSD2012 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 50mA 60V ...

Page 2

... I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 10 I max(pulse (max 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2000 Fairchild Semiconductor International 1000 100 = 50mA = 40mA 30mA 20mA 10mA 0mA 0.01 4 ...

Page 3

... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, February 2000 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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