KSD526 Fairchild Semiconductor, KSD526 Datasheet

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KSD526

Manufacturer Part Number
KSD526
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2006 Fairchild Semiconductor Corporation
KSD526 Rev. A1
KSD526
NPN Epitaxial Silicon Transistor
Power Amplifier Applications
• Complement to KSB596
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Electrical Characteristics
h
V
V
V
I
I
P
T
T
BV
BV
h
V
V
f
C
C
B
I
I
T
FE
CBO
CEO
EBO
C
J
STG
CBO
EBO
FE
CE(
BE(
Symbol
Symbol
cb
CEO
EBO
on
sat
Classification
)
)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation ( T
Junction Temperature
Storage Temperature
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Collector Output Capacitance
Classification
h
FE
Parameter
Parameter
C
=25°C)
T
C
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
1.Base
1
V
V
I
I
V
V
I
V
V
V
C
E
C
CB
EB
CE
CE
CE
CE
CB
= 50mA, I
= 10mA, I
= 3A, I
= 5V, I
= 80V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
2.Collector
Test Condition
1
40∼80
B
TO-220
C
= 0.3A
C
C
C
C
R
C
E
B
E
= 0
= 0.5A
= 3A
= 3A
= 0.5A
= 0
= 0
= 0
= 0, f = 1MHz
3.Emitter
-55~150
Value
150
0.4
80
80
30
5
4
70∼140
O
MIN
80
40
15
5
3
MAX
0.45
50
90
1
8
MAX
100
240
1.5
1.5
120∼240
30
Units
www.fairchildsemi.com
Y
°C
°C
W
V
V
V
A
A
April 2006
Units
MHz
μA
μA
pF
V
V
V
V

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KSD526 Summary of contents

Page 1

... V Base-Emitter On Voltage on BE Current Gain - Bandwidth Product T C Collector Output Capacitance cb h Classification FE Classification h FE ©2006 Fairchild Semiconductor Corporation KSD526 Rev. A1 TO-220 1 1.Base 2.Collector 3.Emitter T = 25°C unless otherwise noted a Parameter =25° 25°C unless otherwise noted C Test Condition V = 80V ...

Page 2

... Figure 1. Static Characteristic 0.0 0.2 0.4 0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage 100 I MAX. (pulse MAX. (continuous 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area KSD526 Rev. A1 1000 = 160mA I = 120mA 100mA 80mA 60mA 40mA B 100 I = 20mA B 10 1E-3 2.5 3.0 3.5 4.0 4.5 5 ...

Page 3

... Package Dimensions KSD526 Rev. A1 TO-220 9.90 ±0.20 (8.70) ø3.60 ±0.10 ±0.10 ±0.10 1.27 1.52 0.80 ±0.10 2.54TYP 2.54TYP ±0.20 ±0.20 [2.54 ] [2.54 ] 10.00 ±0.20 3 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 4

... Definition of Terms Definition of Terms Datasheet Identification Datasheet Identification Advance Information Advance Information Preliminary Preliminary No Identification Needed No Identification Needed Obsolete Obsolete KSD526 Rev. A1 ISOPLANAR™ ISOPLANAR™ PowerSaver™ PowerSaver™ LittleFET™ LittleFET™ PowerTrench PowerTrench MICROCOUPLER™ MICROCOUPLER™ QFET QFET MicroFET™ ...

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