KSP2907A Fairchild Semiconductor, KSP2907A Datasheet
KSP2907A
Manufacturer Part Number
KSP2907A
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSP2907A.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KSP2907A
Manufacturer:
FSC
Quantity:
2 000
Company:
Part Number:
KSP2907ABU
Manufacturer:
FSC
Quantity:
10 028
Company:
Part Number:
KSP2907ABU
Manufacturer:
FairchildSem
Quantity:
51 362
Company:
Part Number:
KSP2907ATA
Manufacturer:
Fairchild
Quantity:
2 270
Part Number:
KSP2907ATA
Manufacturer:
FSC/ON可看货
Quantity:
20 000
©2006 Fairchild Semiconductor Corporation
KSP2907A Rev. E
KSP2907A
PNP General Purpose Amplifier
Features
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base)
• Non suffix “-C” means a Side Collector (1.Emitter 2.Base 3.Collector)
• Available as PN2907A
Absolute Maximum Ratings *
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Note1. Infinite heat sink.
Note2. Minimum Land pad size.
Electrical Characteristics *
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
V
V
V
I
h
V
V
C
f
t
t
V
V
V
I
T
T
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
P
R
R
CBO
T
ON
OFF
C
FE
stg
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
J
obo
CBO
CEO
EBO
C
θJC
θJA
Symbol
Symbol
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Turn Off Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Junction Temperature
Storage Temperature
Collector Power Dissipation, by R
Thermal Resistance, Junction to Case(note1)
Thermal Resistance, Junction to Ambient(note2)
Parameter
CEO
C
= 60V
(max)=625mW
Parameter
Parameter
T
a
=25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
θJA
I
I
I
V
V
V
V
V
V
I
I
I
I
V
I
f = 100MHz
V
V
C
C
E
C
C
C
C
C
CB
CE
CE
CE
CE
CE
CB
CC
CC
= -10µA, I
= -10µA, I
= -10mA, I
= -150mA, I
= -500mA, I
= -150mA, I
= -500mA, I
= -50mA, V
= -30V, I
= -6V, I
= -10V, I
= -50V, I
= -10V, I
= -10V, I
= -10V, I
= -10V, I
= -10V, I
C
Test Condition
1
C
E
C
B
E
C
C
C
C
C
E
= -150mA,I
CE
= 0
= 0
B
B
B
B
= -150mA, I
= 0, f = 1.0MHz
= 0
= 0
= -0.1mA,
= -1mA,
= -10mA,
= -150mA,
= -500mA,
= -15mA
= -50mA
= -15mA
= -50mA
= -20V,
B1
KSP2907A
KSP2907AC : 1. Emitter 2. Collector 3. Base
B1
= I
= -15mA
B1
-55 ~ +150
= -15mA
Value
Max
+150
-600
83.3
625
200
-60
-60
-5
: 1. Emitter 2. Base
1 2 3
Min.
-5.0
100
100
100
200
-60
-60
75
50
Typ.
September 2006
Max. Units
www.fairchildsemi.com
300
-0.4
-1.6
-1.3
-2.6
100
-10
3. Collector
45
Units
Units
8
TO-92
°C/W
°C/W
mW
mA
°C
°C
V
V
V
MHz
nA
pF
ns
ns
V
V
V
V
V
V
V
tm
Related parts for KSP2907A
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
KSP2907A Summary of contents
Page 1
... -50mA -20V 100MHz V = -30V -150mA -6V -150mA September 2006 KSP2907A : 1. Emitter 2. Base 3. Collector KSP2907AC : 1. Emitter 2. Collector 3. Base Value Units -60 -60 -5 -600 +150 -55 ~ +150 Max Units 625 83.3 200 Min. Typ. Max. Units -60 -60 -5.0 -10 75 100 100 ...
Page 2
... Suffix “-BU” - Bulk packing, straight lead form.(see package dimensions) Suffix “-TF” - Tape& Reel packing, 0.200 In-Line Spacing lead form. (see package dimensions) SUffix “-TA” - Tape& AMMO packing, 0.200 In-Line Spacing lead form. (see package dimensions) KSP2907A Rev. E Packing Method Qty(pcs) ...
Page 3
... Typical Characteristics 1000 100 10 -1 -10 I [A], COLLECTOR CURRENT C Figure 1. DC current Gain 100 10 1 0.1 -1 -10 V [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Output Capacitance KSP2907A Rev -10V CE -1 -0.1 -0.01 -1 -100 -1000 Figure 2. Collector-Emitter Saturation Voltage 1000 1MHz 100 10 -100 Figure 4. Current Gain Bandwidth Product ...
Page 4
... Package Dimensions TO-92 Straight Lead Form TO-92 0.200 In-Line Spacing Lead Form KSP2907A Rev. E +0.25 4.58 –0.15 ±0.10 0.46 1.27TYP 1.27TYP 0.38 [1.27 ±0.20 ] [1.27 ±0.20 ] ±0.20 3.60 (R2.29) Dimensions in Millime Dimensions in Inches[Millimeters] 4 +0.10 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
Page 5
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete KSP2907A Rev. E OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...