NDS9410 Fairchild Semiconductor, NDS9410 Datasheet

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NDS9410

Manufacturer Part Number
NDS9410
Description
MOSFET Power DISC BY MFG 2/02
Manufacturer
Fairchild Semiconductor
Datasheets

Specifications of NDS9410

Lead Free Status / Rohs Status
No

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NDS9410A
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications
management and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transients are needed.
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
NDS9410A
Fairchild
such
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
as
SO-8
D
Semiconductor’s
D
notebook
– Continuous
– Pulsed
NDS9410A
S
Device
Parameter
S
computer
S
G
advanced
T
power
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
7.3 A, 30 V.
High performance trench technology for extremely
low R
High power and current handling capability in a
widely used surface mount package.
DS(ON)
5
6
7
8
Tape width
R
R
DS(ON)
DS(ON)
12mm
-55 to +150
Ratings
7.3
2.5
1.2
1.0
30
20
50
25
20
= 28 m @ V
= 42 m @ V
4
3
2
1
GS
GS
April 2000
NDS9410A Rev B(W)
= 10 V
= 4.5 V
2500 units
Quantity
Units
C/W
C/W
W
V
V
A
C

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