PIC18F2420-I/ML Microchip Technology, PIC18F2420-I/ML Datasheet - Page 339

IC PIC MCU FLASH 8KX16 28QFN

PIC18F2420-I/ML

Manufacturer Part Number
PIC18F2420-I/ML
Description
IC PIC MCU FLASH 8KX16 28QFN
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18F2420-I/ML

Program Memory Type
FLASH
Program Memory Size
16KB (8K x 16)
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
25
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
EUSART, I2C, MSSP, SPI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
25
Number Of Timers
1 x 8
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DM163014, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit
Package
28QFN EP
Device Core
PIC
Family Name
PIC18
Maximum Speed
40 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28QFN4 - SOCKET TRANS ICE 28QFN W/CABLEAC164322 - MODULE SOCKET MPLAB PM3 28/44QFN
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18F2420-I/ML
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
TABLE 26-1:
© 2008 Microchip Technology Inc.
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D125
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
D135
Note 1:
Param
No.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
T
T
I
E
V
V
T
T
I
DDP
DDP
Sym
RETD
REF
IE
IW
IW
RETD
D
DRW
DEW
P
PR
IE
IW
PEW
only and are not tested.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-Timed Write
Characteristic
(1)
PIC18F2420/2520/4420/4520
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
10K
Min
1M
3.0
4.5
40
40
MIN
MIN
MIN
1
100K
Typ†
10M
100
1M
10
10
4
4
2
Max
5.5
5.5
5.5
5.5
5.5
-40°C ≤ T
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
mA
ms
ms
ms
ms
V
V
V
V
V
A
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP™ port, +25°C
Using ICSP™ port, +25°C
V
voltage
V
V
specifications are violated
≤ +85°C for industrial
MIN
MIN
MIN
DD
DD
≥ 4.5V
≥ 4.5V, +25°C
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS39631E-page 337

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